Factory Lead Time  

16 Weeks

Package / Case  

TO-220-3

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.25V @ 250μA

Turn Off Delay Time  

16 ns

Power Dissipation (Max)  

79W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Current - Continuous Drain (Id) @ 25℃  

87A Tc

Published  

2004

Series  

HEXFET®

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

6.3MOhm

Voltage - Rated DC  

30V

Current Rating  

87A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

79mW

Case Connection  

DRAIN

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6.3m Ω @ 21A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2130pF @ 15V

Gate Charge (Qg) (Max) @ Vgs  

26nC @ 4.5V

Rise Time  

41ns

Vgs (Max)  

±20V

Fall Time (Typ)  

4.7 ns

Continuous Drain Current (ID)  

87A

Threshold Voltage  

2.25V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

42A

Drain to Source Breakdown Voltage  

30V

Avalanche Energy Rating (Eas)  

60 mJ

Recovery Time  

24 ns

Nominal Vgs  

20 V

Width  

4.69mm

Length  

10.5156mm

Height  

8.763mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free